 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 BC817DS NPN general purpose double transistor Product specification Supersedes data of 2002 Aug 09 2002 Nov 22 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES * High current (500 mA) * 600 mW total power dissipation * Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS * General purpose switching and amplification * Push-pull amplifiers * Multi-phase stepper motor drivers. DESCRIPTION NPN transistor pair in a SOT457 (SC-74) plastic package. handbook, halfpage BC817DS QUICK REFERENCE DATA SYMBOL VCEO IC ICM PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. 45 500 1 UNIT V mA A 6 5 4 5 4 MARKING TYPE NUMBER BC817DS MARKING CODE 6 TR2 TR1 N3 1 Top view 2 3 1 MAM340 2 3 Fig.1 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. - - - - - - Tamb 25 C; note 1 - -65 - -65 Tamb 25 C; note 1 - MAX. UNIT Per transistor unless otherwise specified VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2002 Nov 22 2 total power dissipation 600 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 50 45 5 500 1 200 370 +150 150 +150 V V V mA A mA mW C C C Philips Semiconductors Product specification NPN general purpose double transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to note 1 ambient CONDITIONS BC817DS VALUE 208 UNIT K/W 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL Per transistor ICBO IEBO hFE VCEsat VBE Cc fT Notes 1. Pulse test: tp 300 s; 0.02. 2. VBE decreases by approximately -2 mV/K with increasing temperature. collector-base cut-off current emitter-base cut-off current DC current gain VCB = 20 V; IE = 0 VCB = 20 V; IE = 0; Tj = 150 C VEB = 5 V; IC = 0 VCE = 1 V; IC = 100 mA; note 1 VCE = 1 V; IC = 500 mA; note 1 collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 base-emitter voltage collector capacitance transition frequency VCE = 1 V; IC = 500 mA; notes 1 and 2 VCB = 10 V; IE = Ie = 0; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz - - - 160 40 - - - 100 - - - - - - - 5 - 100 5 100 400 - 700 1.2 - - mV V pF MHz nA A nA PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 2002 Nov 22 3 Philips Semiconductors Product specification NPN general purpose double transistor BC817DS handbook, halfpage 500 MBL747 handbook, halfpage hFE 400 (1) 1000 IC MBL748 (1) (2) (3) (4) (5) (mA) 800 (6) (7) 300 (2) 600 (8) (9) 200 (3) 400 (10) 100 200 0 10-1 1 10 102 IC (mA) 103 0 0 2 4 6 8 10 VCE (V) VCE = 1 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. (1) IB = 15 mA. (2) IB = 13.5 mA. (3) IB = 12 mA. (4) IB = 10.5 mA. (5) IB = 9 mA. (6) IB = 7.5 mA. (7) IB = 6 mA. (8) IB = 4.5 mA. (9) IB = 3 mA. (10) IB = 1.5 mA. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Collector current as a function of collector-emitter voltage; typical values. 103 handbook, halfpage MBL749 handbook, halfpage 1200 VBE 1000 MBL750 (mV) VCEsat (mV) (1) 800 102 600 (1) (2) (3) (3) (2) 400 10 10-1 1 10 102 IC (mA) 103 200 10-1 1 10 102 IC (mA) 103 IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 1 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter voltage as a function of collector current; typical values. 2002 Nov 22 4 Philips Semiconductors Product specification NPN general purpose double transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads BC817DS SOT457 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 c 1 2 3 Lp e bp wM B detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT457 REFERENCES IEC JEDEC EIAJ SC-74 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 2002 Nov 22 5 Philips Semiconductors Product specification NPN general purpose double transistor DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BC817DS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2002 Nov 22 6 Philips Semiconductors Product specification NPN general purpose double transistor NOTES BC817DS 2002 Nov 22 7 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2002 SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp8 Date of release: 2002 Nov 22 Document order number: 9397 750 10582 |
Price & Availability of BC817DS
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |